- 专利标题： Projection exposure system for microlithography and method for generating microlithographic images
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申请号： US11248684申请日： 2005-10-11
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公开(公告)号： US20060023193A1公开(公告)日： 2006-02-02
- 发明人: Karl-Heinz Schuster , Christian Wagner , Martin Schriever
- 申请人： Karl-Heinz Schuster , Christian Wagner , Martin Schriever
- 优先权： DE10010131.3 20000303
- 主分类号： G03B27/72
- IPC分类号： G03B27/72
摘要：
A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
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