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发明申请
US20050266343A1 Photoresist composition and method of forming same 审中-公开
光刻胶组合物及其形成方法

Photoresist composition and method of forming same
摘要：
In a photoresist composition including a blocking group less sensitive to a temperature during a PEB process, the photoresist composition comprising from about 2% to about 10% by weight of a photosensitive resin, from about 0.1% to about 0.5% by weight of a photoacid generator, and a residual amount of a solvent, the photosensitive resin including a blocking group having a weight average molecular weight of from about 70 to about 130.
摘要（中）：

在包含对PEB过程中对温度不太敏感的阻挡基团的光致抗蚀剂组合物中，光致抗蚀剂组合物包含约2％至约10％重量的光敏树脂，约0.1％至约0.5％重量的光酸 发生器和残留量的溶剂，所述感光性树脂包括重均分子量为约70至约130的封闭基团。

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