发明申请
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11045581申请日: 2005-01-31
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公开(公告)号: US20050199978A1公开(公告)日: 2005-09-15
- 发明人: Makoto Takayama
- 申请人: Makoto Takayama
- 申请人地址: JP Moriguchi-city
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Moriguchi-city
- 优先权: JP2004-065980 20040309
- 主分类号: H01L29/872
- IPC分类号: H01L29/872 ; H01L21/329 ; H01L29/47 ; H01L29/76
摘要:
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is hereby solved by forming a Schottky barrier diode using a metal layer comprising a Schottky metal layer of Ti including a small amount of Al. Consequently, a low reverse leak current IR can be obtained without causing a large increase in the forward voltage VF of pure Ti such that power consumption can be reduced by suppressing forward power loss and decreasing reverse power loss.
公开/授权文献
- US07141861B2 Semiconductor device and manufacturing method there 公开/授权日:2006-11-28
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