发明申请
US20050148129A1 Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
有权
具有包含倍半硅氧烷的活性介电层的有机半导体器件
- 专利标题： Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
- 专利标题（中）： 具有包含倍半硅氧烷的活性介电层的有机半导体器件
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申请号： US11042240申请日： 2005-01-25
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公开(公告)号： US20050148129A1公开(公告)日： 2005-07-07
- 发明人: Zhenan Bao , Valerie Jeanne Kuck , Mark Paczkowski
- 申请人： Zhenan Bao , Valerie Jeanne Kuck , Mark Paczkowski
- 专利权人： Lucent Technologies Inc.
- 当前专利权人： Lucent Technologies Inc.
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L29/76 ; H01L51/00 ; H01L51/05 ; H01L51/30 ; H01L21/8234
摘要：
An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.
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