Invention Application
- Patent Title: CHARGE PUMP CIRCUIT WITHOUT BODY EFFECTS
- Patent Title (中): 充电泵电路无身体影响
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Application No.: US10604405Application Date: 2003-07-17
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Publication No.: US20040222841A1Publication Date: 2004-11-11
- Inventor: Hong-chin Lin , Nai-Hsien Chen , Jain-Hao Lu , Chien-Hung Ho
- Main IPC: G05F003/02
- IPC: G05F003/02

Abstract:
A charge pump circuit has input and output nodes, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. A drain of the first transistor and a drain of the second transistor are connected to the input node. A source of the second transistor and a drain of the third transistor are connected to the output node. The first capacitor is connected to a gate of the second transistor. The third transistor is connected to a substrate and a source of the second transistor. When the first transistor is turned on, a voltage at the input node will charge the first capacitor. When the second transistor is turned on, the third transistor is turned on simultaneously so that the substrate and the source of the second transistor will reach the same voltage level. Then, voltage at the input node will charge the second capacitor.
Public/Granted literature
- US06888400B2 Charge pump circuit without body effects Public/Granted day:2005-05-03
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