Invention Grant
- Patent Title: Reader noise reduction using spin hall effects
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Application No.: US18471031Application Date: 2023-09-20
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Publication No.: US12211525B2Publication Date: 2025-01-28
- Inventor: Wenyu Chen , Yan Wu
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Salle Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/37

Abstract:
A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the AP1 reference layer on the FL.
Public/Granted literature
- US20240013805A1 Reader Noise Reduction Using Spin Hall Effects Public/Granted day:2024-01-11
Information query
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