Invention Grant
- Patent Title: Etched trenches in bond materials for die singulation, and associated systems and methods
-
Application No.: US17145752Application Date: 2021-01-11
-
Publication No.: US12132155B2Publication Date: 2024-10-29
- Inventor: Vladimir Odnoblyudov , Scott D. Schellhammer , Jeremy S. Frei
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- The original application number of the division: US14617668 2015.02.09
- Main IPC: H01L33/52
- IPC: H01L33/52 ; H01L21/56 ; H01L21/683 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L33/00 ; H01L33/20 ; H01L33/44 ; H01L33/62 ; H01S5/02 ; H10K50/84 ; H10K50/844 ; H10K71/00

Abstract:
Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.
Public/Granted literature
- US20210135067A1 ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2021-05-06
Information query
IPC分类: