- 专利标题: Gate driver circuits with independently tunable performance characteristics
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申请号: US17549520申请日: 2021-12-13
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公开(公告)号: US12119817B2公开(公告)日: 2024-10-15
- 发明人: Xiaoqing Song , Utkarsh Raheja , Pietro Cairoli , Sayan Acharya
- 申请人: ABB Schweiz AG
- 申请人地址: CH Baden
- 专利权人: ABB Schweiz AG
- 当前专利权人: ABB Schweiz AG
- 当前专利权人地址: CH Baden
- 代理机构: McCarter & English, LLP
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H02H3/087 ; H02H7/22
摘要:
A gate driver circuit is provided that includes a turn-on path, a turn-off path, and a fast discharge path. The turn-on path is couplable between a gate of a solid-state switch and a voltage turn-on signal (VGON) from a gate driver, where the turn-on path defines a turn-on time for the solid-state switch. The turn-off path is couplable between the gate and a voltage turn-off signal (VGOFF) from the gate driver, where the turn-off path defines a turn-off time for the solid-state switch. The fast discharge path is selectively couplable in parallel with the turn-off path during a portion of a gate-to-source voltage (VGS) transition for the solid-state switch, where the turn-off path in parallel with the fast discharge path defines a turn-off delay for the solid-state switch and each of the turn-on time, the turn-off time, and the turn-off delay are independently configurable.
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