- 专利标题: Semiconductor device and method of manufacture
-
申请号: US17813906申请日: 2022-07-20
-
公开(公告)号: US12100672B2公开(公告)日: 2024-09-24
- 发明人: Jiun Yi Wu , Chen-Hua Yu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US16746115 2020.01.17
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; H01L21/48 ; H01L21/56 ; H01L23/00 ; H01L23/14 ; H01L23/31 ; H01L23/498 ; H01L23/538
摘要:
A device includes an interconnect device attached to a redistribution structure, wherein the interconnect device includes conductive routing connected to conductive connectors disposed on a first side of the interconnect device, a molding material at least laterally surrounding the interconnect device, a metallization pattern over the molding material and the first side of the interconnect device, wherein the metallization pattern is electrically connected to the conductive connectors, first external connectors connected to the metallization pattern, and semiconductor devices connected to the first external connectors.
公开/授权文献
- US20220352096A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE 公开/授权日:2022-11-03
信息查询
IPC分类: