Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18333661Application Date: 2023-06-13
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Publication No.: US12100459B2Publication Date: 2024-09-24
- Inventor: Shinya Okuno , Shigeki Nagasaka , Toshiyuki Kouchi
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06F5/06 ; G06F13/16 ; G11C7/02 ; G11C7/10 ; G11C16/10 ; G11C16/12 ; G11C16/16 ; G11C16/26 ; G11C16/32

Abstract:
A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.
Public/Granted literature
- US20230326535A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-10-12
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