- 专利标题： Gallium nitride bi-directional high electron mobility transistor in switched mode power converter applications
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申请号： US17842459申请日： 2022-06-16
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公开(公告)号： US12088210B2公开(公告)日： 2024-09-10
- 发明人: Michael J. Harrison
- 申请人： Enphase Energy, Inc.
- 申请人地址： US CA Petaluma
- 专利权人： Enphase Energy, Inc.
- 当前专利权人： Enphase Energy, Inc.
- 当前专利权人地址： US CA Petaluma
- 代理机构： Moser Taboada
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H02M5/293 ; H02M7/48 ; H02M7/5387 ; H01L29/20 ; H01L29/778
摘要：
A switched mode power converter is provided herein and comprises a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a common drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction.
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