- 专利标题： Semiconductor device and integrated circuit in hybrid row height structure
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申请号： US17831108申请日： 2022-06-02
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公开(公告)号： US12074069B2公开(公告)日： 2024-08-27
- 发明人: Jerry Chang-Jui Kao , Hui-Zhong Zhuang , Li-Chung Hsu , Sung-Yen Yeh , Yung-Chen Chien , Jung-Chan Yang , Tzu-Ying Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L23/535
- IPC分类号： H01L23/535 ; H01L21/48 ; H01L21/822 ; H01L23/50
摘要：
A semiconductor device includes several first cell row an several second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. A first row of the first cell rows is configured for a first cell to be arranged. The second cell rows extend in the first direction. Each of the second cell rows has a second row height that is different from the first row height. At least one row of the second cell rows includes a portion for at least one second cell to be arranged. The portion has a third row height that is different from the first row height and the second row height.
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