- 专利标题: Dual-mode high-side power field-effect transistor driver for power regulators
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申请号: US17707329申请日: 2022-03-29
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公开(公告)号: US12057765B2公开(公告)日: 2024-08-06
- 发明人: Mengmeng Du , Matthew Alan Grant , Daniel Dahua Zheng
- 申请人: Renesas Electronics America Inc.
- 申请人地址: US CA Milpitas
- 专利权人: Renesas Electronics America Inc.
- 当前专利权人: Renesas Electronics America Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: SCULLY, SCOTT, MURPHY & PRESSER, P.C.
- 主分类号: H02M1/08
- IPC分类号: H02M1/08 ; H02M3/155
摘要:
Apparatuses and methods for operating a power converter are described. An integrated circuit can be integrated in a high-side driver of a high-side fiend-effect transistor (FET) of the power converter. The integrated circuit can detect a phase node voltage of a power integrated circuit. The integrated circuit can, in response to the phase node voltage being less than a threshold voltage, operate a high-side FET of the power integrated circuit in a constant-current mode. The integrated circuit can, in response to the phase node voltage being greater than the threshold voltage, operate the high-side FET of the power integrated circuit in a constant-voltage mode.
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