- 专利标题: Semiconductor device and method of manufacture
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申请号: US18359684申请日: 2023-07-26
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公开(公告)号: US12057410B2公开(公告)日: 2024-08-06
- 发明人: Jiun Yi Wu , Chen-Hua Yu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US17097206 2020.11.13
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/48 ; H01L23/538
摘要:
A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.
公开/授权文献
- US20230369249A1 Semiconductor Device and Method of Manufacture 公开/授权日:2023-11-16
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