- 专利标题： Semiconductor device and method of forming the same
-
申请号： US18312325申请日： 2023-05-04
-
公开(公告)号： US12033965B2公开(公告)日： 2024-07-09
- 发明人: Wen-Hao Cheng , Yen-Yu Chen , Chih-Wei Lin , Yi-Ming Dai
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/56 ; H01L21/768 ; H01L23/31 ; H01L23/522
摘要：
A method is provided. The method includes forming an interconnect structure electrically connected to a semiconductor device; forming a tantalum-based barrier layer over the interconnect structure; oxidizing the tantalum-based barrier layer to form a tantalum oxide over the tantalum-based barrier layer; and forming a metal layer over the tantalum oxide.
公开/授权文献
- US20230275048A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 公开/授权日：2023-08-31
信息查询
IPC分类:
