- 专利标题: Display apparatus having an oxide semiconductor pattern
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申请号: US18105682申请日: 2023-02-03
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公开(公告)号: US12022704B2公开(公告)日: 2024-06-25
- 发明人: Kyeong-Ju Moon , So-Young Noh , Ki-Tae Kim , Hyuk Ji
- 申请人: LG Display Co., Ltd.
- 申请人地址: KR Seoul
- 专利权人: LG DISPLAY CO., LTD.
- 当前专利权人: LG DISPLAY CO., LTD.
- 当前专利权人地址: KR Seoul
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: KR 20190180187 2019.12.31
- 主分类号: H10K59/131
- IPC分类号: H10K59/131 ; H10K50/844
摘要:
A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.
公开/授权文献
- US20230189591A1 DISPLAY APPARATUS HAVING AN OXIDE SEMICONDUCTOR PATTERN 公开/授权日:2023-06-15
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