- 专利标题： Substrate processing method and substrate processing apparatus
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申请号： US17690709申请日： 2022-03-09
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公开(公告)号： US12020943B2公开(公告)日： 2024-06-25
- 发明人: Atsushi Yamashita , Koji Kagawa
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer; Tanya E. Harkins
- 优先权： JP 21043648 2021.03.17
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; B08B3/08 ; B08B13/00 ; F26B5/00 ; H01L21/02 ; H01L21/3213
摘要：
A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.
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