- 专利标题： Method of determining defective die containing non-volatile memory cells
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申请号： US17576754申请日： 2022-01-14
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公开(公告)号： US12020762B2公开(公告)日： 2024-06-25
- 发明人: Yuri Tkachev , Jinho Kim , Cynthia Fung , Gilles Festes , Bernard Bertello , Parviz Ghazavi , Bruno Villard , Jean Francois Thiery , Catherine Decobert , Serguei Jourba , Fan Luo , Latt Tee , Nhan Do
- 申请人： Silicon Storage Technology, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Silicon Storage Technology, Inc.
- 当前专利权人： Silicon Storage Technology, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： DLA Piper LLP (US)
- 主分类号： G11C29/50
- IPC分类号： G11C29/50
摘要：
A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.
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