- 专利标题: Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages
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申请号: US18182305申请日: 2023-03-10
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公开(公告)号: US12020743B2公开(公告)日: 2024-06-25
- 发明人: Joseph Michael McCrate , Robert John Gleixner , Hari Giduturi , Ramin Ghodsi
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Greenberg Traurig
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; G11C11/408 ; G11C11/4091
摘要:
The application relates to an architecture that allows for less precision of demarcation read voltages by combining two physical memory cells into a single logical bit. Reciprocal binary values may be written into the two memory cells that make up a memory pair. When activated using bias circuitry and address decoders the memory cell pair creates current paths having currents that may be compared to detect a differential signal. The application is also directed to writing and reading memory cell pairs.
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