Invention Grant
- Patent Title: Package having redistribution layer structure with protective layer and method of fabricating the same
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Application No.: US17341314Application Date: 2021-06-07
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Publication No.: US12014993B2Publication Date: 2024-06-18
- Inventor: Chen-Hua Yu , Kuo-Chung Yee , Chun-Hui Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L25/00 ; H01L25/10

Abstract:
Provided is a method of fabricating a package including: providing a die with a contact thereon; forming a redistribution layer (RDL) structure on the die, the forming the RDL structure on the die comprising: forming a first dielectric material on the die; forming a conductive feature in and partially on the first dielectric material; after the forming the conductive feature, forming a protective layer on the conductive feature, wherein the protective layer covers a top surface of the conductive feature and extends to cover a top surface of the first dielectric material; forming a second dielectric material on the protective layer; and performing a planarization process to expose the conductive feature; and forming a plurality of conductive connectors to electrically connect the die through the RDL structure.
Public/Granted literature
- US20210296252A1 PACKAGE HAVING REDISTRIBUTION LAYER STRUCTURE WITH PROTECTIVE LAYER AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-09-23
Information query
IPC分类: