Invention Grant
- Patent Title: Semiconductor structure and method of manufacturing a semiconductor structure
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Application No.: US17244800Application Date: 2021-04-29
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Publication No.: US12009316B2Publication Date: 2024-06-11
- Inventor: Hsien-Wen Liu , Hsien-Wei Chen , Jie Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/538

Abstract:
A semiconductor structure includes a first die having a first surface and a second surface opposite to the first surface, a conductive bump disposed at the first surface, and an RDL under the conductive bump. The RDL includes an interconnect structure and a dielectric layer, and the interconnect structure is electrically connected to the first die through the conductive bump. The semiconductor structure further includes a molding over the RDL and surrounding the first die and the conductive bump, an adhesive over the molding and the second surface, and a support element over the adhesive. A method includes providing a first die having a first surface and a second surface, a redistribution layer over the first surface, and a molding surrounding the first die; removing a portion of the molding to expose the second surface; and attaching a support element over the molding and the second surface.
Public/Granted literature
- US20220352089A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE Public/Granted day:2022-11-03
Information query
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