Invention Grant
- Patent Title: Metal-insulator-metal (MIM) capacitor structure for layer count reduction and lower capacitance variation
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Application No.: US17547093Application Date: 2021-12-09
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Publication No.: US12009292B2Publication Date: 2024-06-11
- Inventor: Nosun Park , Changhan Hobie Yun , Daniel Daeik Kim , Paragkumar Ajaybhai Thadesar , Sameer Sunil Vadhavkar
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02

Abstract:
An integrated circuit (IC) includes a substrate and a first metal-insulator-metal (MIM) capacitor. The first MIM capacitor includes a first plate comprising a first metallization layer on a surface of the substrate. The first MIM capacitor also includes a first MIM insulator layer on a first portion of a surface of the first plate, a sidewall of the first plate, and a first portion of the surface of the substrate. The first MIM capacitor further includes a second plate on the first MIM insulator layer and on a second portion of the surface of the substrate, the second plate comprising a second metallization layer. The IC also includes an inductor comprising a portion of the second plate on the second portion of the surface of the substrate.
Public/Granted literature
Information query
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