Invention Grant
- Patent Title: Substrate bonding apparatus and method of manufacturing a semiconductor device
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Application No.: US17346743Application Date: 2021-06-14
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Publication No.: US12002700B2Publication Date: 2024-06-04
- Inventor: Sho Kawadahara
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20150678 2020.09.08
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L23/00
Abstract:
According to one embodiment, there is provided a substrate bonding apparatus including a first chuck stage and a second chuck stage. The first chuck stage includes a first electromagnetic force generation unit. The first chuck stage is chuckable for a first substrate. The second chuck stage includes a second electromagnetic force generation unit. The second electromagnetic force generation unit faces the first electromagnetic force generation unit. The second chuck stage is chuckable for a second substrate.
Public/Granted literature
- US20220076980A1 SUBSTRATE BONDING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2022-03-10
Information query
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