- 专利标题: Semiconductor structure having word lines intersect with active regions
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申请号: US17595618申请日: 2021-06-09
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公开(公告)号: US11980024B2公开(公告)日: 2024-05-07
- 发明人: Qu Luo
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: Cooper Legal Group, LLC
- 优先权: CN 2010968812.0 2020.09.15
- 国际申请: PCT/CN2021/099181 2021.06.09
- 国际公布: WO2022/057332A 2022.03.24
- 进入国家日期: 2021-11-19
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
The present disclosure relates to the field of semiconductor technologies, and provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a semiconductor base, bit lines and word lines, wherein a plurality of active regions is provided in the semiconductor base; the bit lines are disposed in the semiconductor base, extend in a first direction and are connected to the active regions; and the word lines are disposed on the semiconductor base above the bit lines, extend in a second direction, and intersect with the active regions.
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