- 专利标题： Method of manufacturing semiconductor devices
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申请号： US17226332申请日： 2021-04-09
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公开(公告)号： US11978640B2公开(公告)日： 2024-05-07
- 发明人: Yi-Chen Lo , Yi-Shan Chen , Chih-Kai Yang , Pinyen Lin
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： STUDEBAKER & BRACKETT PC
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/033 ; H01L21/66
摘要：
In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.
公开/授权文献
- US20220328324A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES 公开/授权日：2022-10-13
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