- 专利标题: MEMS device, manufacturing method of the same, and integrated MEMS module using the same
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申请号: US17412160申请日: 2021-08-25
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公开(公告)号: US11939212B2公开(公告)日: 2024-03-26
- 发明人: Heng-Chung Chang , Jhih-Jie Huang , Chih-Ya Tsai , Jing-Yuan Lin
- 申请人: Industrial Technology Research Institute
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 优先权: TW 9145665 2020.12.23
- 主分类号: B81C1/00
- IPC分类号: B81C1/00
摘要:
A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.
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