- 专利标题: Semiconductor device and method for fabricating the same
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申请号: US17739010申请日: 2022-05-06
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公开(公告)号: US11903254B2公开(公告)日: 2024-02-13
- 发明人: Ji Eun Choi , Deok Hoi Kim , Jeong Hwan Kim , Jong Baek Seon , Jun Cheol Shin , Jae Hak Lee
- 申请人: SAMSUNG DISPLAY CO., LTD.
- 申请人地址: KR Yongin-si
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR Yongin-si
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 优先权: KR 20190082715 2019.07.09
- 分案原申请号: US16839796 2020.04.03
- 主分类号: H10K59/12
- IPC分类号: H10K59/12 ; H10K59/121 ; H10K59/123 ; H10K59/126 ; H10K77/10 ; H01L27/12 ; H01L29/24 ; H01L29/786 ; H01L29/66 ; H10K102/00
摘要:
A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.
公开/授权文献
- US20220262885A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日:2022-08-18
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