Invention Grant
- Patent Title: Integrated dipole flow for transistor
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Application No.: US17557787Application Date: 2021-12-21
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Publication No.: US11888045B2Publication Date: 2024-01-30
- Inventor: Yongjing Lin , Karla M Bernal Ramos , Luping Li , Shih Chung Chen , Jacqueline S. Wrench , Yixiong Yang , Steven C. H. Hung , Srinivas Gandikota , Naomi Yoshida , Lin Dong
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/40 ; H01L29/49
Abstract:
Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).
Public/Granted literature
- US20220115516A1 INTEGRATED DIPOLE FLOW FOR TRANSISTOR Public/Granted day:2022-04-14
Information query
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