A plasma processing apparatus 100 including: a chamber 101 having a dielectric window; a coil 102 placed outside the chamber so as to face the dielectric window; a FS electrode 103 having a plate shape and placed on the chamber side of the coil; a first power source 104 for supplying a high-frequency power of a first frequency to the coil 102; a second power source 105 for supplying a high-frequency power of a second frequency which is different from the first frequency, to the FS electrode 103; a first matcher 106 placed between the first power source and the coil; a second matcher 107 placed between the second power source and the FS electrode; and a first frequency attenuation filter connected between the second matcher and the FS electrode, and configured to allow transmission of the high-frequency power of the second frequency and inhibit transmission of the high-frequency power of the first frequency.