- 专利标题： In-cell bypass diode
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申请号： US17971369申请日： 2022-10-21
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公开(公告)号： US11869992B2公开(公告)日： 2024-01-09
- 发明人: Seung Bum Rim , Gabriel Harley
- 申请人： Maxeon Solar Pte. Ltd.
- 申请人地址： SG Singapore
- 专利权人： Maxeon Solar Pte. Ltd.
- 当前专利权人： Maxeon Solar Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 分案原申请号： US16881705 2020.05.22
- 主分类号： H01L31/0443
- IPC分类号： H01L31/0443 ; H01L31/02 ; H01L31/0368 ; H01L31/18 ; H01L27/142
摘要：
A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.
公开/授权文献
- US20230038148A1 IN-CELL BYPASS DIODE 公开/授权日：2023-02-09
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