- 专利标题: Transconductance circuits with degeneration transistors
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申请号: US17959481申请日: 2022-10-04
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公开(公告)号: US11863138B2公开(公告)日: 2024-01-02
- 发明人: Devrim Aksin
- 申请人: Analog Devices, Inc.
- 申请人地址: US MA Wilmington
- 专利权人: Analog Devices, Inc.
- 当前专利权人: Analog Devices, Inc.
- 当前专利权人地址: US MA Wilmington
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: H03F3/45
- IPC分类号: H03F3/45
摘要:
An example transconductance circuit includes a first portion that includes a first degeneration transistor, configured to receive a first input voltage, and a second portion that includes a second degeneration transistor, coupled to the first degeneration transistor and configured to receive a second input voltage. The first portion further includes a first input transistor, coupled to the first degeneration transistor and configured to provide a first output current, while the second portion further includes a second input transistor, coupled to the second degeneration transistor and configured to provide a second output current. Such a transconductance circuit may be used as an input stage capable of reliably operating within drain-source breakdown voltage of the transistors employed therein even in absence of any other protection devices, and may be significantly faster, consume lower power, and occupy smaller die area compared to conventional transconductance circuits.
公开/授权文献
- US20230023984A1 TRANSCONDUCTANCE CIRCUITS WITH DEGENERATION TRANSISTORS 公开/授权日:2023-01-26
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