- 专利标题： Method for manufacturing semiconductor device having gallium oxide-based semiconductor layer
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申请号： US17551274申请日： 2021-12-15
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公开(公告)号： US11862477B2公开(公告)日： 2024-01-02
- 发明人: Shuhei Ichikawa , Hiroki Miyake
- 申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- 当前专利权人： DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- 当前专利权人地址： JP Kariya; JP Toyota; JP Nisshin
- 代理机构： POSZ LAW GROUP, PLC
- 优先权： JP 21004786 2021.01.15
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/425 ; H01L29/24
摘要：
A method for manufacturing a semiconductor device having a gallium oxide-based semiconductor layer includes: ion-implanting dopant into a gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer; and annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere, after the ion-implanting.
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