- 专利标题: Fail bit repair method and device
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申请号: US17445300申请日: 2021-08-17
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公开(公告)号: US11853152B2公开(公告)日: 2023-12-26
- 发明人: Yui-Lang Chen
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: SYNCODA LLC
- 代理商 Feng Ma
- 优先权: CN 2010832381.5 2020.08.18
- 主分类号: G06F11/00
- IPC分类号: G06F11/00 ; G06F11/07
摘要:
A Fail Bit (FB) repair method includes: a bank to be repaired of a chip to be repaired is determined; first repair processing is performed on a first FB using a redundant circuit; a bit position of a second FB in each target repair bank is determined, and second repair processing is performed on the second FB; an unrepaired FB in each target repair bank is determined, and candidate repair combinations of the unrepaired FBs and a candidate combination count are determined; and if the candidate combination count is greater than a combination count threshold, a target repair position is determined, and repair processing is performed on the target repair position using a Redundant Word-Line (RWL), the target repair position being a position of an FB that maximally reduces the candidate combination count after repair processing.
公开/授权文献
- US20220058079A1 FAIL BIT REPAIR METHOD AND DEVICE 公开/授权日:2022-02-24
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