Invention Grant
- Patent Title: Deposition system and method
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Application No.: US17384310Application Date: 2021-07-23
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Publication No.: US11851751B2Publication Date: 2023-12-26
- Inventor: Wen-Hao Cheng , Hsuan-Chih Chu , Yen-Yu Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: C23C14/56
- IPC: C23C14/56 ; B08B7/02 ; B08B5/02 ; B08B7/04 ; B08B9/00 ; C23C14/34 ; C23C14/50 ; B08B13/00

Abstract:
A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.
Public/Granted literature
- US20230022509A1 DEPOSITION SYSTEM AND METHOD Public/Granted day:2023-01-26
Information query
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