- 专利标题: 2H to 1T phase based transition metal dichalcogenide sensor for optical and electronic detection of strong electron donor chemical vapors
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申请号: US17032658申请日: 2020-09-25
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公开(公告)号: US11841338B2公开(公告)日: 2023-12-12
- 发明人: Adam L. Friedman , F. Keith Perkins , James C. Culbertson , Aubrey T. Hanbicki , Paul M. Campbell
- 申请人: The Government of the United States of America, as Represented by the Secretary of the Navy
- 申请人地址: US VA Arlington
- 专利权人: The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人: The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址: US VA Arlington
- 代理机构: US Naval Research Laboratory
- 代理商 Rebecca L. Forman
- 分案原申请号: US15652491 2017.07.18
- 主分类号: G01N27/26
- IPC分类号: G01N27/26 ; G01N27/12 ; G01N21/77 ; G01N21/65 ; C01B19/04 ; C01G33/00 ; C01G35/00 ; C01G39/06 ; C01G41/00 ; C07C211/05 ; C07C211/00 ; C07C211/07 ; G01N21/78 ; C12N9/16 ; G01N21/64 ; H04B7/00
摘要:
Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.
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