- Patent Title: Method of forming a stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell
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Application No.: US17517298Application Date: 2021-11-02
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Publication No.: US11818897B1Publication Date: 2023-11-14
- Inventor: Rajeev Kumar Dokania , Noriyuki Sato , Tanay Gosavi , Amrita Mathuriya , Sasikanth Manipatruni
- Applicant: Kepler Computing Inc.
- Applicant Address: US CA San Francisco
- Assignee: KEPLER COMPUTING INC.
- Current Assignee: KEPLER COMPUTING INC.
- Current Assignee Address: US CA San Francisco
- Agency: MUGHAL GAUDRY & FRANKLIN PC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H10B53/30
Abstract:
To compensate switching of a dielectric component of a non-linear polar material based capacitor, an explicit dielectric capacitor is added to a memory bit-cell and controlled by a signal opposite to the signal driven on a plate-line.
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