- 专利标题: Photoresist formulation
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申请号: US17538384申请日: 2021-11-30
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公开(公告)号: US11815812B2公开(公告)日: 2023-11-14
- 发明人: David C. Graham , Joel P. Provence , Sean T. Weaver , Richard D. Wells
- 申请人: Funai Electric Co., Ltd.
- 申请人地址: JP Osaka
- 专利权人: Funai Electric Co., Ltd.
- 当前专利权人: Funai Electric Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Luedeka Neely, P.C.
- 主分类号: G03F7/031
- IPC分类号: G03F7/031 ; G03F7/09 ; H01L21/027
摘要:
A planarization layer and method therefor. The planarization layer has a thickness ranging from about 2 to about 3 microns, and contains from about 8.0 to about 8.5 wt. % photoacid generator; from about 2 to about 3.6 wt. % photoinitiator; from about 0.35 to about 0.5 wt. % green dye; from about 35 to about 46 wt. % multifunctional epoxy compound; from about 35 to about 50 wt. % of one or more difunctional epoxy compounds; and from about 1 to about 2.6 wt. % silane adhesion promoter, wherein all weight percent is based on a total weight of the layer devoid of solvent.
公开/授权文献
- US20230168580A1 PHOTORESIST FORMULATION 公开/授权日:2023-06-01
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