Invention Grant
- Patent Title: Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen
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Application No.: US17749240Application Date: 2022-05-20
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Publication No.: US11798980B2Publication Date: 2023-10-24
- Inventor: Jeonggyu Song , Kyooho Jung , Younsoo Kim , Haeryong Kim , Jooho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190130813 2019.10.21
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H10B12/00 ; H01L49/02
Abstract:
A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
Public/Granted literature
- US20220278192A1 METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM Public/Granted day:2022-09-01
Information query
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