A manufacturing method of a capacitive structure includes: providing a semiconductor base; forming a first mask layer on the semiconductor base, the first mask layer having a plurality of first round hole patterns distributed uniformly; forming first openings distributed uniformly on the semiconductor base by etching based on the first round hole patterns; forming a second mask layer on one side, away from the semiconductor base, of the first openings, and forming a plurality of second patterns on the second mask layer; forming second openings distributed uniformly on the semiconductor base by etching based on the second patterns; and etching the first openings and the second openings to form capacitive holes, and depositing a lower electrode layer, a dielectric layer and an upper electrode layer within the capacitive holes to form the capacitive structure.