- 专利标题: Method of fabricating microelectronic devices and related microelectronic devices, tools, and apparatus
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申请号: US17241386申请日: 2021-04-27
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公开(公告)号: US11784050B2公开(公告)日: 2023-10-10
- 发明人: Andrew M. Bayless , Brandon P. Wirz
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: H01L21/265
- IPC分类号: H01L21/265 ; H01L21/324 ; H01L21/768 ; H01L21/78
摘要:
A microelectronic device may have side surfaces each including a first portion and a second portion. The first portion may have a highly irregular surface topography extending from an adjacent surface of the microelectronic device. The second portion may have a less uneven surface extending from the first portion to an opposing surface of the microelectronic device. Methods of forming the microelectronic device may include creating dislocations in the wafer in a street between the one or more microelectronic devices by implanting ions and cleaving the wafer responsive to failure of stress concentrations near the dislocations through application of heat, tensile forces or a combination thereof. Related packages and methods are also disclosed.
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