- 专利标题： Bypass circuitry to improve switching speed
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申请号： US17660725申请日： 2022-04-26
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公开(公告)号： US11777485B2公开(公告)日： 2023-10-03
- 发明人: Ravindranath D. Shrivastava , Simon Willard , Peter Bacon
- 申请人： pSemi Corporation
- 申请人地址： US CA San Diego
- 专利权人： PSEMI CORPORATION
- 当前专利权人： PSEMI CORPORATION
- 当前专利权人地址： US CA San Diego
- 代理机构： Steinfl + Bruno LLP
- 主分类号： H03K17/04
- IPC分类号： H03K17/04 ; H03K17/0412
摘要：
Methods and devices to improve the switching speed of radio frequency FET switch stacks are disclosed. The described methods and devices are based on bypassing drain-sources resistors when the FET switch stack is transitioning from an ON to an OFF state. Several implementations of the disclosed teachings are also presented.
公开/授权文献
- US20220321113A1 BYPASS CIRCUITRY TO IMPROVE SWITCHING SPEED 公开/授权日：2022-10-06
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