Invention Grant
- Patent Title: Silicon nano light emitting diodes
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Application No.: US17765361Application Date: 2021-12-10
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Publication No.: US11756983B2Publication Date: 2023-09-12
- Inventor: Rajeev J. Ram , Jaehwan Kim , Jin Xue , Zheng Li
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Smith Baluch LLP
- International Application: PCT/US2021/062889 2021.12.10
- International Announcement: WO2022/125950A 2022.06.16
- Date entered country: 2022-03-30
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm−2, exceeding the performance of even high brightness gallium nitride LEDs.
Public/Granted literature
- US20230139185A1 SILICON NANO LIGHT EMITTING DIODES Public/Granted day:2023-05-04
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