- 专利标题： Formation method of semiconductor device using mask layer and sidewall spacer material layer to form trenches
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申请号： US17249422申请日： 2021-03-02
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公开(公告)号： US11721553B2公开(公告)日： 2023-08-08
- 发明人: Jisong Jin
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址： CN Shanghai; CN Beijing
- 代理机构： Anova Law Group, PLLC
- 优先权： CN 2010148879.X 2020.03.05
- 主分类号： H01L21/033
- IPC分类号： H01L21/033
摘要：
A method for forming a semiconductor device includes providing a to-be-etched layer, forming a first mask layer on the to-be-etched layer, forming a patterned core layer on the first mask layer of a first region, forming a sidewall spacer material layer on the core layer and the first mask layer, removing the sidewall spacer material layer on a top surface of the core layer, removing the core layer and the first mask layer at a bottom of the core layer to form a first trench, removing the sidewall spacer material layer on the first mask layer of a second region, forming a first patterned layer exposing the first mask layer of the second region, and using the first patterned layer as a mask to remove the first mask layer of the second region to form a second trench.
公开/授权文献
- US20210280423A1 SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF 公开/授权日：2021-09-09
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