Invention Grant
- Patent Title: Semiconductor device defect analysis method
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Application No.: US17469169Application Date: 2021-09-08
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Publication No.: US11668743B2Publication Date: 2023-06-06
- Inventor: Hakgyun Kim , Bumsuk Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210011035 2021.01.26
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; G01R31/28 ; H01L21/66

Abstract:
A method of analyzing defects in a semiconductor device includes: collecting current data by applying a test voltage to the semiconductor device; extracting data within a decrease range from the current data; dividing the current data into a first component value and a second component value using the current data and the data extracted from within the decrease range; calculating a first quality index from the first component value satisfying a first function; and calculating a second quality index from the second component value satisfying a second function that is different from the first function.
Public/Granted literature
- US20220236314A1 SEMICONDUCTOR DEVICE DEFECT ANALYSIS METHOD Public/Granted day:2022-07-28
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