- 专利标题: Multi-chip device and method of formation
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申请号: US17458702申请日: 2021-08-27
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公开(公告)号: US11637087B2公开(公告)日: 2023-04-25
- 发明人: Chin-Hua Wang , Po-Chen Lai , Shu-Shen Yeh , Tsung-Yen Lee , Po-Yao Lin , Shin-Puu Jeng
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Cooper Legal Group, LLC
- 主分类号: H01L23/49
- IPC分类号: H01L23/49 ; H01L25/065 ; H01L25/00 ; H01L23/498 ; H01L23/373
摘要:
A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.
公开/授权文献
- US20230063550A1 MULTI-CHIP DEVICE AND METHOD OF FORMATION 公开/授权日:2023-03-02
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