- 专利标题: Embedding MRAM device in advanced interconnects
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申请号: US16886830申请日: 2020-05-29
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公开(公告)号: US11621294B2公开(公告)日: 2023-04-04
- 发明人: Ashim Dutta , Saumya Sharma , Tianji Zhou , Chih-Chao Yang
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 L. Jeffrey Kelly
- 主分类号: H01L27/22
- IPC分类号: H01L27/22 ; H01L43/02 ; H01L43/12
摘要:
A technique relates to an integrated circuit (IC). Pillars of a set of memory elements are formed. A bilayer dielectric is formed between the pillars, the bilayer dielectric having an upper dielectric material formed on a lower dielectric material without requiring an etch of the lower dielectric material prior to forming the upper dielectric material, thereby preventing a void in the bilayer dielectric, the lower dielectric material including one or more flowable dielectric materials.
公开/授权文献
- US20210375986A1 EMBEDDING MRAM DEVICE IN ADVANCED INTERCONNECTS 公开/授权日:2021-12-02
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