Embedding MRAM device in advanced interconnects
摘要:
A technique relates to an integrated circuit (IC). Pillars of a set of memory elements are formed. A bilayer dielectric is formed between the pillars, the bilayer dielectric having an upper dielectric material formed on a lower dielectric material without requiring an etch of the lower dielectric material prior to forming the upper dielectric material, thereby preventing a void in the bilayer dielectric, the lower dielectric material including one or more flowable dielectric materials.
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