- 专利标题: Asymmetrical PN junction thermoelectric couple structure and its parameter determination method
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申请号: US16959035申请日: 2019-03-19
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公开(公告)号: US11600758B2公开(公告)日: 2023-03-07
- 发明人: Ruochen Wang , Ding Luo , Wei Yu , Weiqi Zhou , Long Chen
- 申请人: JIANGSU UNIVERSITY
- 申请人地址: CN Zhenjiang
- 专利权人: JIANGSU UNIVERSITY
- 当前专利权人: JIANGSU UNIVERSITY
- 当前专利权人地址: CN Zhenjiang
- 代理机构: Heslin Rothenberg Farley & Mesiti, P.C.
- 优先权: CN201910179839.9 20190311
- 国际申请: PCT/CN2019/078587 WO 20190319
- 国际公布: WO2020/181568 WO 20200917
- 主分类号: H01L35/32
- IPC分类号: H01L35/32 ; G01R21/06 ; H01L35/10 ; G01R31/26
摘要:
The present invention discloses an asymmetrical PN junction thermoelectric couple structure and its parameter determination method. By changing the structural parameters of p-type semiconductor or n-type semiconductor, the current generated by p-type semiconductor is equal to the current generated by the n-type semiconductor, so that the high-efficiency output of PN junction thermoelectric couple can be realized. Meanwhile, the present invention provides a method for determining the parameters of PN junction based on the numerical solution method. Finally, the optimal size parameters of PN junction are obtained.
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