- 专利标题： Chemically-amplified-type negative-type photoresist composition
-
申请号： US16098706申请日： 2017-04-26
-
公开(公告)号： US11586109B2公开(公告)日： 2023-02-21
- 发明人: Seung Hun Lee , Seung Hyun Lee , Su Jin Lee , Young Cheol Choi
- 申请人： YOUNG CHANG CHEMICAL CO., LTD
- 申请人地址： KR Gyeongsangbuk-do
- 专利权人： YOUNG CHANG CHEMICAL CO., LTD
- 当前专利权人： YOUNG CHANG CHEMICAL CO., LTD
- 当前专利权人地址： KR Gyeongsangbuk-do
- 代理机构： Novick, Kim & Lee PLLC
- 代理商 Jae Youn Kim
- 优先权： KR10-2016-0058744 20160513
- 国际申请： PCT/KR2017/004451 WO 20170426
- 国际公布： WO2017/196010 WO 20171116
- 主分类号： G03F7/038
- IPC分类号： G03F7/038 ; G03F7/004 ; G03F7/30
摘要：
The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.
公开/授权文献
信息查询
IPC分类:
