- 专利标题： Photoacoustic sensors and MEMS devices
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申请号： US17116029申请日： 2020-12-09
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公开(公告)号： US11573204B2公开(公告)日： 2023-02-07
- 发明人: Rainer Markus Schaller , Jochen Dangelmaier , Matthias Eberl , Simon Gassner , Franz Jost , Stefan Kolb , Horst Theuss
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Harrity & Harrity, LLP
- 优先权： DE102019134279.1 20191213
- 主分类号： G01N21/17
- IPC分类号： G01N21/17 ; G01N29/02 ; B81B3/00
摘要：
A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.
公开/授权文献
- US20210181151A1 PHOTOACOUSTIC SENSORS AND MEMS DEVICES 公开/授权日：2021-06-17
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