Compound semiconductor and method for producing the same
Abstract:
Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (μτ product) in a wide range, wherein the main surface has an area of 100 mm2 or more and has 50% or more of regions where the μτ product is 1.0×10−3 cm2/V or more based on the entire main surface, and a method for effectively producing the same.
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