Invention Grant
- Patent Title: Compound semiconductor and method for producing the same
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Application No.: US16498712Application Date: 2018-09-14
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Publication No.: US11552174B2Publication Date: 2023-01-10
- Inventor: Kohei Yamada , Koji Murakami , Kenya Itani
- Applicant: JX NIPPON MINING & METALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JX NIPPON MINING & METALS CORPORATION
- Current Assignee: JX NIPPON MINING & METALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPJP2018-021997 20180209
- International Application: PCT/JP2018/034260 WO 20180914
- International Announcement: WO2019/155674 WO 20190815
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/04 ; H01L29/22

Abstract:
Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (μτ product) in a wide range, wherein the main surface has an area of 100 mm2 or more and has 50% or more of regions where the μτ product is 1.0×10−3 cm2/V or more based on the entire main surface, and a method for effectively producing the same.
Public/Granted literature
- US20210111252A1 COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME Public/Granted day:2021-04-15
Information query
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